Western Digital
Western Digital PC SN530 512GB M.2 2230 NVMe PCIe Gen3 x4 SSD - SDBPTPZ-512G
- SKU:
- WESTERN DIGITAL SDBPTPZ-512G
- UPC:
- 718037183299
- MPN:
- SDBPTPZ-512G
- Condition:
- Used
- Availability:
- Should Ship in 1-3 Business Days.
- Shipping:
- Calculated at Checkout
Description
Upgrade or replace internal storage in compact laptops, 2-in-1 convertibles, and handheld gaming consoles with the Western Digital PC SN530 512GB NVMe SSD (MPN: SDBPTPZ-512G). Engineered in an ultra-short M.2 2230 form factor, this OEM solid-state drive delivers responsive PCIe Gen3 x4 performance, rapid boot times, and seamless file handling in space-constrained mobile platforms.
Featuring Western Digital’s in-house controller architecture paired with 96-layer BiCS4 3D TLC NAND and Host Memory Buffer (HMB) acceleration, the SN530 achieves sequential read speeds up to 2,400 MB/s while maintaining optimized power consumption and low thermal output.
Product Features:
Ultra-Compact M.2 2230 Profile: Measuring just 22mm x 30mm with a single-sided design, ideal for ultra-thin notebooks, compact tablets, and handheld gaming systems.
PCIe Gen3 x4 NVMe Interface: Delivers significantly faster throughput and lower latency than SATA-based drives for faster operating system boots, quicker game load times, and responsive multitasking.
BiCS4 3D TLC NAND & HMB Support: Built with 96-layer 3D TLC flash memory and Host Memory Buffer technology for sustained efficiency and low power draw.
Reliable OEM Drop-In Replacement: Direct OEM replacement drive for compatible systems from Microsoft, Dell, HP, Lenovo, and other PC manufacturers requiring part number SDBPTPZ-512G.
Technical Specifications:
Manufacturer: Western Digital
Model / Series: PC SN530 NVMe SSD
Part Number (MPN): SDBPTPZ-512G (including -1012 and regional suffix variants)
Capacity: 512 GB
Form Factor: M.2 2230 (Single-Sided)
Interface: PCIe Gen 3.0 x4, NVMe 1.4
Sequential Read Speed: Up to 2,400 MB/s
Sequential Write Speed: Up to 1,750 MB/s
Random Read (4KB): Up to 315,000 IOPS
Random Write (4KB): Up to 230,000 IOPS
NAND Flash Type: 96-Layer BiCS4 3D TLC
Endurance Rating: 300 TBW (Total Bytes Written)
Keying: M-Key