SK hynix PVC10 512GB M.2 2230 NVMe PCIe Gen4 x4 SSD - HFS512GEM3X174N

Accelerate your handheld gaming console, compact ultrabook, or small-form-factor PC with next-generation storage performance. The SK hynix PVC10 (MPN: HFS512GEM3X174N) delivers blistering PCIe Gen4 x4 speeds in an ultra-short M.2 2230 profile, making it a high-performance upgrade or direct replacement for space-constrained mobile platforms like the Steam Deck, ASUS ROG Ally, and Microsoft Surface devices.

Built around SK hynix’s proprietary multi-core controller and advanced 4D TLC NAND architecture, the PVC10 achieves high-speed sequential read performance up to 6,500 MB/s and write speeds up to 5,200 MB/s. Host Memory Buffer (HMB) caching and intelligent thermal throttling ensure rapid boot times, instant game loading, and smooth data multitasking while maintaining low power consumption and controlled heat dissipation.

Product Features:

Ultra-Compact M.2 2230 Form Factor: Single-sided 22mm x 30mm design fits seamlessly into handheld gaming consoles, thin-and-light laptops, and compact tablets.
Blazing PCIe Gen4 x4 Performance: Delivers up to 6,500 MB/s read speeds over NVMe 1.4c protocols, drastically cutting system boot times and heavy game load screens (fully backward compatible with PCIe Gen3 platforms).
Advanced SK hynix 4D TLC NAND: Pairs high-density 3D/4D TLC flash memory with Host Memory Buffer (HMB) SLC caching for sustained high-speed throughput without draining battery life.
Direct OEM Drop-In Compatibility: Functions as a factory-spec replacement or capacity upgrade for systems utilizing Dell part number 0M0JFT or equivalent 2230 M-Key NVMe drives.

Technical Specifications:

Manufacturer: SK hynix
Model / Series: PVC10 Client NVMe SSD
Part Number (MPN): HFS512GEM3X174N (Dell P/N: 0M0JFT)
Capacity: 512 GB
Form Factor: M.2 2230 (Single-Sided, 22mm x 30mm)
Interface: PCIe Gen 4.0 x4, NVMe 1.4c (PCIe Gen3 backward compatible)
Sequential Read Speed: Up to 6,500 MB/s
Sequential Write Speed: Up to 5,200 MB/s
Random Read (4KB): Up to 900,000 IOPS
Random Write (4KB): Up to 1,000,000 IOPS
NAND Flash Type: SK hynix TLC 4D NAND
Cache Architecture: Host Memory Buffer (HMB) / Pseudo-pSLC Cache
Endurance Rating: 300 TBW (Total Bytes Written)
Keying: M-Key