Kioxia
KIOXIA BG6 512GB M.2 2230 NVMe PCIe Gen4 x4 SSD - KBG60ZNS512G
- SKU:
- KIOXIA KBG60ZNS512G
- MPN:
- KBG60ZNS512G
- Condition:
- Used
- Availability:
- Should Ship in 1-3 Business Days.
- Shipping:
- Calculated at Checkout
Description
Upgrade or replace internal solid-state storage in compact laptops, 2-in-1 convertibles, and handheld gaming consoles with the KIOXIA BG6 512GB NVMe SSD (MPN: KBG60ZNS512G). Built in an ultra-short M.2 2230 profile, this OEM drive delivers advanced PCIe Gen4 x4 bandwidth to space-constrained systems, ensuring rapid OS boot sequences, faster game loading, and seamless multitasking.
Equipped with KIOXIA BiCS FLASH 3D TLC technology and Host Memory Buffer (HMB) acceleration, the BG6 achieves sequential read speeds up to 4,800 MB/s and sequential write speeds up to 4,000 MB/s while maintaining optimized power draw and stable thermal performance under heavy mobile workloads.
Product Features:
Ultra-Compact M.2 2230 Form Factor: Measures just 22mm x 30mm in a single-sided design, engineered specifically for handheld gaming systems, ultra-thin notebooks, and compact tablets.
PCIe Gen4 x4 NVMe Interface: Complies with PCIe 4.0 and NVMe 1.4c standards (backward compatible with PCIe Gen3) to deliver enhanced data throughput and reduced system latency.
BiCS FLASH TLC & HMB Architecture: Utilizes high-efficiency 3D TLC NAND combined with Host Memory Buffer technology for snappy responsiveness without draining device battery life.
Reliable OEM Drop-In Replacement: Factory-spec direct replacement or capacity upgrade for compatible Dell, HP, Lenovo, and Microsoft Surface devices requiring part number KBG60ZNS512G.
Technical Specifications:
Manufacturer: KIOXIA (formerly Toshiba Memory)
Model / Series: BG6 Client SSD
Part Number (MPN): KBG60ZNS512G
Capacity: 512 GB
Form Factor: M.2 2230-S2 (Single-Sided, 22mm x 30mm)
Interface: PCIe Gen 4.0 x4, NVMe 1.4c (PCIe Gen3 backward compatible)
Sequential Read Speed: Up to 4,800 MB/s
Sequential Write Speed: Up to 4,000 MB/s
Random Read (4KB): Up to 650,000 IOPS
Random Write (4KB): Up to 850,000 IOPS
NAND Flash Type: BiCS FLASH 3D TLC
Endurance Rating: 300 TBW (Total Bytes Written)
Operating Voltage: DC +3.3V (±5%)
Keying: M-Key