Micron 2550 512GB M.2 2230 NVMe PCIe Gen4 x4 SSD - MTFDKBK512TGE

Upgrade or replace internal storage in compact laptops, 2-in-1 convertibles, and handheld gaming consoles with the Micron 2550 512GB NVMe SSD (MPN: MTFDKBK512TGE). Engineered in an ultra-compact M.2 2230 form factor, this OEM drive delivers high-bandwidth PCIe Gen4 x4 speeds to space-constrained systems, significantly cutting boot times, game load screens, and file transfer delays.

Built with Micron’s breakthrough 232-layer 3D TLC NAND flash and Host Memory Buffer (HMB) architecture, the Micron 2550 achieves sequential read speeds up to 5,000 MB/s and sequential write speeds up to 4,000 MB/s. Dynamic write acceleration and advanced sleep-state power management deliver flagship Gen4 responsiveness while keeping battery drain and thermal output to a minimum.

Product Features:

Ultra-Compact M.2 2230 Profile: Measuring just 22mm x 30mm with a single-sided profile, designed specifically for handheld gaming systems, ultra-thin ultrabooks, and compact tablets.
High-Speed PCIe Gen4 x4 NVMe Interface: Complies with PCIe 4.0 and NVMe standards (backward compatible with PCIe Gen3 platforms) to maximize throughput and responsiveness.
Cutting-Edge 232-Layer 3D TLC NAND: Leverages high-density TLC flash memory paired with Host Memory Buffer (HMB) caching for sustained high speeds under intensive workloads without excessive power consumption.
Direct OEM Drop-In Replacement: Standard factory-installed drive and direct drop-in replacement for compatible Dell, HP, Lenovo, and Microsoft Surface devices requiring part number MTFDKBK512TGE.

Technical Specifications:

Manufacturer: Micron Technology
Model / Series: 2550 Client NVMe SSD
Part Number (MPN): MTFDKBK512TGE (including -1BK1AABDA, -1BK1AABYY, and OEM variants)
Capacity: 512 GB
Form Factor: M.2 2230 (Single-Sided, 22mm x 30mm)
Interface: PCIe Gen 4.0 x4, NVMe (PCIe Gen3 backward compatible)
Sequential Read Speed: Up to 5,000 MB/s
Sequential Write Speed: Up to 4,000 MB/s
NAND Flash Type: Micron 232-Layer 3D TLC
Cache Architecture: Host Memory Buffer (HMB) / Dynamic Write Acceleration
Endurance Rating: 300 TBW (Total Bytes Written)
Operating Voltage: DC +3.3V (±5%)
Keying: M-Key